| タイトル | InGaAsP CW Lasers on (110) InP Substrates |
| 著者（英） | Hawrylo, F. Z. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 1983-05-01 |
| 言語 | eng |
| 内容記述 | Quality InGaAsP/InP CW laser structures grown by conventional liquidphase epitaxy on (110) InP substrates without using special growth procedures. Improved surface quality and grown-layer morphology are attributable to nearlyperfect surface stoichiometry of (110) surface which makes available equal numbers of In and P deposition sites. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 82B10347
LAR-12840 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/414384 |
