| タイトル | Modified Silicon Furnace Lowers Crystal Cost |
| 著者（英） | Lane, R. L. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1983-03-01 |
| 言語 | eng |
| 内容記述 | Modified Czochralski setup grows several large crystals in succession from one crucible. Modified apparatus is expected to reduce cost per crystal by about 50 percent. Key features are: isolation valve between growth and pulling chamber, and recharging mechanism. Functional changes reduce cycle time and prolong crucible life. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 82B10216
NPO-15041 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/414515 |
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