| タイトル | Materials of construction for silicon crystal growth |
| 著者（英） | Leipold, M. H.; Odonnell, T. P.; Hagan, M. A. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1980-01-01 |
| 言語 | eng |
| 内容記述 | The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 81A35549 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/416548 |
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