| タイトル | A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells |
| 著者（英） | Gatos, H. C.; Mao, B. Y.; Chi, J. Y. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1980-07-01 |
| 言語 | eng |
| 内容記述 | Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 80A45121 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/420864 |
