| タイトル | Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout |
| 著者（英） | Thom, R. D.; Miller, W. E.; Hendricks, H. D. |
| 著者所属（英） | Santa Barbara Research Center; NASA Langley Research Center |
| 発行日 | 1979-01-01 |
| 言語 | eng |
| 内容記述 | The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager. |
| NASA分類 | SPACECRAFT INSTRUMENTATION |
| レポートNO | 80A44647 |
| 権利 | Copyright |
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