| タイトル | Fracture toughness of silicon |
| 著者（英） | Chen, C. P.; Leipold, M. H. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1980-04-01 |
| 言語 | eng |
| 内容記述 | The paper presents a study to determine the fracture toughness and to characterize fracture modes of silicon as a function of the orientation of single-crystal and polycrystalline material. It is shown that bar specimens cracked by Knoop microhardness indentation and tested to fracture under four-point bending at room temperature were used to determine the fracture toughness values. It is found that the lowest fracture toughness value of single crystal silicon was 0.82 MN/m to the 3/2 in the 111 plane type orientation, although the difference in values in the 111, 110, and 100 planes was small. |
| NASA分類 | NONMETALLIC MATERIALS |
| レポートNO | 80A32091
ACS PAPER 32-B-78 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/422086 |
