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タイトルHydrogen Q-disease and electropolishing
その他のタイトル水素Q病と電解研磨
著者(日)樋口 玉緒; 斉藤 健治; 山崎 良成; 池田 篤美; 大串 重夫
著者(英)Higuchi, Tamao; Saito, Kenji; Yamazaki, Yoshishige; Ikeda, Tokumi; Ogushi, Shigeo
著者所属(日)総合研究大学院大学; 高エネルギー加速器研究機構 加速器研究施設; 高エネルギー加速器研究機構 加速器研究施設; 野村鍍金; 野村鍍金
著者所属(英)Graduate University for Advanced Studies; High Energy Accelerator Research Organization Accelerator Laboratory; High Energy Accelerator Research Organization Accelerator Laboratory; Nomura Plating Co. Ltd.; Nomura Plating Co. Ltd.
発行日2003-06
刊行物名Proceedings of the 10th Workshop on RF Superconductivity, SRF2001
Proceedings of the 10th Workshop on RF Superconductivity, SRF2001
開始ページ427
終了ページ430
刊行年月日2003-06
言語eng
抄録To find out the mechanism of the hydrogen absorption during electropolishing (EP), degree of hydrogen Q-disease of an L-band niobium (RRR (Residual Resistivity Ratio) = 200) single-cell cavity was compared between 1) continuous EP, 2) intermittent EP and 3) dipping into EP solution. It was found that hydrogen Q-disease did not occur in case 1) and occurred in cases 2) and 3). It was also found that with the niobium (RRR = 200) samples treated by the same way as above 1), 2), 3), hydrogen absorption was not observed in case 1) and was observed in cases 2) and 3). During the measurement of the cavity performance, it was noticed that a baking (130 C, 48 hr) was helpful to ease the seriousness of the hydrogen Q-disease. Concentration of the hydrogen was measured on the niobium samples that was treated with EP removing different amount of surface material (after hydrogen absorption through dipping into acid solution) and the results suggested that the absorbed hydrogen was localized in the surface layer of the samples.
キーワードhydrogen Q-disease; hydrogen absorption; superconducting cavity resonator; EDM; hydrogen concentration; electropolishing; baking; surface treatment; gas chromatography; research and development; chemical bond; L-band Nb single-cell cavity; CBL; 水素Q病; 水素吸収; 超伝導空洞共振器; EDM; 水素濃度; 電解研磨; ベーキング; 表面処理; ガスクロマトグラフィ; 研究開発; 化学結合; Lバンド・ニオブ単セル空洞; CBL
資料種別Conference Paper
SHI-NOAA0046174079
レポートNOKEK-Proceedings-2003-2
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/42293


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