| タイトル | Titanium in silicon as a deep level impurity |
| 著者（英） | Rohatgi, A.; Milnes, A. G.; Chen, J.-W. |
| 著者所属（英） | Carnegie-Mellon Univ. |
| 発行日 | 1979-09-01 |
| 言語 | eng |
| 内容記述 | Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 79A53849 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/425193 |
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