| タイトル | Infrared photoresponse of silicon devices at 1.15 microns |
| 著者（英） | Lanyon, H. P. D.; Mccurdy, A. K.; Tuft, R. A. |
| 著者所属（英） | Worcester Polytechnic Inst. |
| 発行日 | 1978-01-01 |
| 言語 | eng |
| 内容記述 | The photoconductive absorption of silicon devices at 1.15 microns is through band-to-band transitions with the simultaneous absorption of a 57.7 meV phonon. Its temperature dependence arises both from the changing phonon population and, more significantly, from the change in silicon bandgap with temperature. The temperature dependence of the photoresponse of quasi-intrinsic silicon samples is in good agreement with the optical absorption data of Macfarlane et al. More heavily doped silicon devices show a photoresponse extending to a lower temperature and having a smaller temperature dependence than intrinsic silicon. This is explained in terms of bandgap narrowing. Comparison with theoretical curves enables the resolution of bandgap reductions at the meV level. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 79A40888 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/426429 |
