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titleEnhance refractive index modification of fused silica by multiwavelength excitation process using F2 and K[lc]rF excimer lasers
Other TitleF2およびKrFエキシマレーザを用いる多波長励起過程による溶融シリカの屈折率改変の増強
Author(jpn)小幡 孝太郎; 杉岡 幸次; 豊田 浩一; 緑川 克美
Author(eng)Obata, Kotaro; Sugioka, Koji; Toyoda, Koichi; Midorikawa, Katsumi
Author Affiliation(jpn)東京理科大学 基礎工学部 電子応用工学科; 理化学研究所 レーザー物理工学研究室; 東京理科大学 基礎工学部 電子応用工学科; 理化学研究所 レーザー物理工学研究室
Author Affiliation(eng)Tokyo University of Science Department of Applied Electronics, Faculty of Industrial Science and Technology; Institute of Physical and Chemical Research Laser Technology Laboratory; Tokyo University of Science Department of Applied Electronics, Faculty of Industrial Science and Technology; Institute of Physical and Chemical Research Laser Technology Laboratory
Issue Date2003-01
PublisherInstitute of Physical and Chemical Research
Publication titleRIKEN Review
RIKEN Review
Issue50
Start page42
End page46
Publication date2003-01
Languageeng
AbstractA multiwavelength excitation process using F2 and KrF excimer lasers for the high-efficiency and high-speed refractive index modification of fused silica is demonstrated. This process is essentially superior to conventional single-wavelength F2 laser processing. The former process achieves twice the diffraction efficiency of the latter process at the same number of total photons supplied to the sample. This high-speed and high-efficiency modification is realized within +/- 50 ns of the delay time of each F2 and KrF excimer laser beam irradiation. In addition, the refractive index of the multiwavelength sample was increased to 8.2 x 10(exp -3) which is 1.78 times larger than that of the single-wavelength F2 laser irradiation sample at the same irradiation time. This superiority of the multiwavelength excitation process is attributed to a resonance-photoionization-like process based on excited-state absorption in fused silica.
KeywordsF2 laser; KrF laser; excimer laser; refractive index; fused silica; laser processing; multiwavelength excitation; optoelectronic device; F2レーザ; KrFレーザ; エキシマレーザ; 屈折率; 溶融シリカ; レーザ処理; 多波長励起; オプトエレクトロニクス装置
Document TypeConference Paper
ISSN0919-3405
SHI-NOAA0045001007
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/42652


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