| タイトル | Electron mobility and free-carrier absorption in GaAs - Determination of the compensation ratio |
| 著者（英） | Lagowski, L.; Walukiewicz, W.; Gatos, H. C.; Jastrzebski, L.; Lichtensteiger, M. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1979-02-01 |
| 言語 | eng |
| 内容記述 | Theoretical calculations of electron mobility and free-carrier absorption in n-type GaAs at room temperature were carried out taking into consideration all major scattering processes. It was found that satisfactory agreement between theoretical and experimental results on free-carrier absorption is obtained only when the effect of compensation is quantitatively taken into account. In conjunction with experimental studies it is shown that the electron mobility (for n greater than 10 to the 15th per cu cm) and free-carrier absorption (for n greater than 10 to the 16th per cu cm) are sufficiently sensitive to the ionized impurity concentration to provide a reliable means for determining the compensation ratio. Convenient procedures are presented for the determination of the compensation ratio from the free-carrier absorption coefficient and from the computed values of room-temperature electron mobility. Values of the compensation ratio obtained by these two procedures are in good agreement provided the carrier-concentration variations in the material are not appreciably greater than 10%. |
| NASA分類 | METALLIC MATERIALS |
| レポートNO | 79A25743 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/428220 |
