| タイトル | Scratch encourages selective doping |
| 著者（英） | Hawrylo, F. Z.; Kressel, H. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 1980-06-01 |
| 言語 | eng |
| 内容記述 | Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 79B10558
LAR-11590 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/430208 |
