| タイトル | Germanium-on-InP heterojunction-structure LED |
| 著者（英） | Hawrylo, F. Z. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 1980-06-01 |
| 言語 | eng |
| 内容記述 | Ge-on-InP heterojunction structure LED has been developed where in Ge film is evaporated onto commercially available InP substrate. Forward bias of device is approximately 1 volt, and it emits light in 9.800 angstrom region. Technique permits easy and inexpensive fabrication of LED for application at this wavelength. |
| NASA分類 | PHYSICAL SCIENCES |
| レポートNO | 79B10488
LAR-12349 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/430278 |
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