| タイトル | Structure development in silicon sheet by shaped crystallization |
| 著者（英） | De Angelis, R. J.; Leipold, M. H. |
| 著者所属（英） | Kentucky Univ.|Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1978-01-01 |
| 言語 | eng |
| 内容記述 | Models are presented for the development of a parallel twinned structure of the 110 plane type and the 112 line type in silicon ribbons. The models are believed to be mutually compatible and operable. The first model relates the requirements for super-cooling during crystallization. The existence of reentrant angles associated with the twin structure is proposed to provide a rough interface to reduce super-cooling. The spacing of the twins is proposed to be limited by the geometrical relationship between the thermal gradient in the liquid and the dimensions of the twinned crystallization front. The second model relates the thermal stress configuration to detail dislocation reactions which would be expected to develop twins. While a specific dislocation mechanism cannot yet be defined, a number of alternatives are presented. All of these various dislocation mechanisms would result in the observed crystalline configuration and the choice among them is not critical. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 78A52856 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/430923 |
