| タイトル | Recovery of shallow junction GaAs solar cells damaged by electron irradiation |
| 著者（英） | Walker, G. H.; Conway, E. J. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 1978-10-01 |
| 言語 | eng |
| 内容記述 | Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 78A52198 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/431012 |
