| タイトル | Stabilization of n-type semiconductors to photoanodic dissolution by competitive electron transfer processes |
| 著者（英） | Legg, K. D.; Bolts, J. M.; Wrighton, M. S.; Ellis, A. B.; Bocarsly, A. B. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1977-01-01 |
| 言語 | eng |
| 内容記述 | The behavior of n-type CdX (X = S, Se, Te) and GaP, GaAs, and InP in alkaline electrolytes containing X(--) and X sub n(--) ions is reviewed. Of the 18 combinations of electrode and electrolyte, 12 alliances are completely stable to photoanodic dissolution of the n-type photoanode. In each case the oxidation of the chalcogenide species at the photoanode is reversed at the cathode to complete an electrochemical cycle involving no net chemical change. The best system in terms of light-to-electric energy conversion seems to be the CdTe-based cell employing the Te(--)/Te2(--) electrolyte, with roughly 10% efficiency at an output voltage of 0.35 V for monochromatic 633 nm input optical energy at about 25 mW/sq cm. |
| NASA分類 | INORGANIC AND PHYSICAL CHEMISTRY |
| レポートNO | 78A39462 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/432459 |
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