| タイトル | Annealing of GaAs solar cells damaged by electron irradiation |
| 著者（英） | Walker, G. H.; Conway, E. J. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 1978-04-01 |
| 言語 | eng |
| 内容記述 | Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 78A30192 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/433257 |
