| タイトル | Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy |
| 著者（英） | Chi, J.-Y.; Gatos, H. C. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1977-12-01 |
| 言語 | eng |
| 内容記述 | A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 78A18286 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/434293 |
