| タイトル | Surface photovoltage due to photo-thermo-ionization of surface states - GaAs |
| 著者（英） | Morawski, A.; Gatos, H. C.; Lagowski, J.; Slusarczuk, M. M. G. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1977-12-01 |
| 言語 | eng |
| 内容記述 | Surface photovoltage spectroscopy was employed for studying the mechanism of subbandgap photoionization transitions from surface states in GaAs surfaces. It was found that the photoionization cross-section exhibits a maximum for a photon energy of about 0.9 eV. This finding indicates a photo-thermal mechanism of photovoltage, i.e., photo-induced transitions between surface state levels and the subsequent thermal ejection of electrons from the upper level into the conduction band. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 78A16394 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/434487 |
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