| タイトル | Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells |
| 著者（英） | Scott-Monck, J.; Rahilly, W. P.; Locker, D.; Anspaugh, B. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.|Air Force Aero Propulsion Lab.|Spectrolab, Inc.|Air Force Avionics Lab. |
| 発行日 | 1976-01-01 |
| 言語 | eng |
| 内容記述 | Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance. |
| NASA分類 | SPACECRAFT PROPULSION AND POWER |
| レポートNO | 78A10942 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/435054 |
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