タイトル | SEM probe of IC radiation sensitivity |
著者(英) | Stanley, A. G.; Gauthier, M. K. |
著者所属(英) | Jet Propulsion Lab., California Inst. of Tech. |
発行日 | 1979-03-01 |
言語 | eng |
内容記述 | Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section. |
NASA分類 | MECHANICS |
レポートNO | 78B10541 NPO-14350 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/435630 |