| タイトル | A backside illuminated 400 x 400 charge-coupled device imager |
| 著者（英） | Walker, J. W.; Rhines, W. C.; Hornbeck, L. J.; Chan, W. W.; Antcliffe, G. A.; Collins, D. R. |
| 著者所属（英） | Xerox Corp.|Texas Instruments, Inc. |
| 発行日 | 1976-11-01 |
| 言語 | eng |
| 内容記述 | Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 77A12938 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/440164 |
