| タイトル | Impedance of silver oxide-zinc cells |
| 著者（英） | Long, W. L.; Frank, H. A.; Uchiyama, A. A. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1976-01-01 |
| 言語 | eng |
| 内容記述 | Over 100 sealed AgO-Zn cells were subjected to prolonged periods of storage over a range of temperatures and storage modes including open circuit, trickle charge, and float charge. Impedances of these cells were monitored throughout, and at the end of the storage period their transient voltage characteristics were observed at the onset of discharge. Results revealed that the impedances of these cells tended to increase with storage time; the magnitude of the impedance rise was dependent primarily on temperature and to a lesser degree on storage mode. Typical values for 50 A-hr cells were usually less than 100 mohm immediately after activation and from 1 to 30 ohm after 6-10 months of storage. Transient voltages of these cells droped sharply during the first msec of discharge and then rose to a stablized value during the following few seconds. The magnitude of the initial drop and the stabilized voltage values were found to be related to impedance but not in a linear manner. The magnitude and duration of the low transient voltages may be unacceptable in some applications of these cells. The impedance variations are attributed to changes occurring at the positive electrode. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 76A17316 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/444583 |
