| タイトル | Epitaxial growth of Ga1-xAlxAs on GaP |
| 著者（英） | Farmer, G. I.; Woodall, J. M. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 1976-08-01 |
| 言語 | eng |
| 内容記述 | Technique, suitable for monolithic device fabrication methods, permits growth of LED structures on GaP substrates by liquid-phase epitaxial method, thus obviating needs for growing thick layers and for removing substrates. High efficiency infrared LED's can be developed as pumping sources for Nd:YAG lasers. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 76B10261
GSC-11826 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/445957 |
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