| タイトル | Ovonic type switching in tin selenide thin films |
| 著者（英） | Mclennan, W. D.; Baxter, C. R. |
| 発行日 | 1975-02-01 |
| 言語 | eng |
| 内容記述 | Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 75A25677 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/448753 |
