| タイトル | The effect of Be/+/ ion implanted exponential and uniform impurity profiles on the electrical characteristics of GaAs solar cells |
| 著者（英） | Vaidyanathan, K. V.; Walker, G. H. |
| 発行日 | 1974-01-01 |
| 言語 | eng |
| 内容記述 | The high surface recombination velocity is the major deterrent to obtaining efficient GaAs solar cells. If, however, an electric field is built in at the surface, the carriers will be swept away from the surface thus minimizing the surface recombination velocity problem. It has been previously shown theoretically that an exponential impurity distribution in the doped region of the cell results in a built-in electric field. Ion implantation was used to produce solar cells with an exponential impurity profile and cells with uniform profiles. It is shown that cells with an exponential impurity profile have higher open-circuit voltage, fill factors, and spectral response than those with a uniform impurity profile. |
| NASA分類 | AUXILIARY SYSTEMS |
| レポートNO | 74A34372 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/452212 |
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