| タイトル | Millimeter wave devices: Research project on millimeter-wave semiconductor devices |
| その他のタイトル | ミリ波デバイス:ミリ波半導体デバイスの研究課題 |
| 著者（日） | 松井 敏明; 篠原 啓介; 東脇 正高; 広瀬 信光 |
| 著者（英） | Matsui, Toshiaki; Shinohara, Keisuke; Higashiwaki, Masataka; Hirose, Nobumitsu |
| 著者所属（日） | 通信総合研究所 横須賀無線通信研究センター; 通信総合研究所 横須賀無線通信研究センター; 通信総合研究所 横須賀無線通信研究センター; 通信総合研究所 横須賀無線通信研究センター |
| 著者所属（英） | Communications Research Laboratory Yokosuka Radio Communications Research Center; Communications Research Laboratory Yokosuka Radio Communications Research Center; Communications Research Laboratory Yokosuka Radio Communications Research Center; Communications Research Laboratory Yokosuka Radio Communications Research Center |
| 発行日 | 2002-07-19 |
| 発行機関など | Communications Research Laboratory
通信総合研究所 |
| 刊行物名 | Journal of the Communications Research Laboratory
通信総合研究所英文論文集 |
| 巻 | 48 |
| 号 | 4 |
| 開始ページ | 131 |
| 終了ページ | 138 |
| 刊行年月日 | 2002-07-19 |
| 言語 | eng |
| 抄録 | In order to put millimeter-wave communications systems to use, it is crucial to improve the efficiency of communications devices and to minimize their size. In the institute, millimeter-wave semiconductor devices are focused on in order to develop millimeter-wave communication technology which can be adapted to various applications. Among the results is the attainment of a cutoff frequency of 472 GHz, the world's highest figure to date. In the following manuscript, the research project is introduced including InP and nitride compound semiconductor devices, SiGe semiconductor devices, Si-CMOS integrated circuit and SiN passivation film using hot-wire CVD process. |
| キーワード | wireless communication; millimeter wave; semiconductor device; miniaturization; chemical vapor deposition; Si-CMOS; 無線通信; ミリ波; 半導体デバイス; 小型化; 化学蒸着; Si-CMOS |
| 資料種別 | Technical Report |
| ISSN | 0914-9260 |
| SHI-NO | AA0033276011 |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/45540 |
