| タイトル | A new electric field effect in silicon solar cells. |
| 著者（英） | Mandelkorn, J.; Lamneck, J. H., Jr. |
| 発行日 | 1973-10-01 |
| 言語 | eng |
| 内容記述 | The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited. |
| NASA分類 | AUXILIARY SYSTEMS |
| レポートNO | 73A45426 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/455678 |
|
