| タイトル | A non-LTE study of silicon line formation in early-type main-sequence atmospheres. |
| 著者（英） | Kamp, L. W. |
| 発行日 | 1973-03-01 |
| 言語 | eng |
| 内容記述 | We have computed populations of 16 levels of Si III-V and radiation fields in all connecting transitions; in particular the first six Si III triplet levels, including the 4553 line, and the first six Si IV levels including 4089. The computations were done for four non-LTE H-He model atmospheres, provided by Auer and Mihalas. Estimates of corresponding MK types are B1.5 V, B0.5 V, O9 V, and O6. Solutions were obtained by iterating the linearized equations of radiative transfer and statistical equilibrium, except that for less important lines an approximate equivalent two-level atom treatment was used. Continuous opacities of C, N, O, and Ne were included. All abundances were solar values. |
| NASA分類 | SPACE SCIENCES |
| レポートNO | 73A23532 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/458134 |
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