| タイトル | Electron tunnelling into amorphous germanium and silicon. |
| 著者（英） | Clark, A. H.; Smith, C. W. |
| 発行日 | 1972-01-01 |
| 言語 | eng |
| 内容記述 | Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system. |
| NASA分類 | PHYSICS, SOLID-STATE |
| レポートNO | 73A20454 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/458489 |
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