Structural and luminescent properties of SrGa2Se4:Ce thin films prepared by multi-source deposition

Abstract

IIaIIIb2VIb4 ternary compound thin films doped with Ce(3+) ion are of interest for full color thin-film EL (Electroluminescence) display, because it shows blue emission with good chromaticity. In this investigation, SrGa2Se4:Ce thin films were prepared by the multi-source deposition technique using Sr, Ga2Se3, Se and CeF3 sources. The structural property and composition of the films deposited were characterized and the growth mechanism of the film was discussed. The SrGa2Se4 film could be successfully deposited without SrSe and GaSe phases at a Ga2Se3/Sr flux ratio of 56 and at a substrate temperature of 450 C. It was shown that when Ga2Se3 evaporates from the source, it decomposes into GaSe and Se2. It is suggested from these results that the formation of SrGa2Se4 or SrSe depends strongly on the substrate temperature.

Ce(3+)イオンをドープしたIIaIIIb2VIb4の3元化合物薄膜は、良い色度の青色光放出を示すので、フルカラー薄膜EL(エレクトロルミネセンス)ディスプレイとして興味深い。本研究では、Sr、Ga2Se3、Se、およびCeF3原料を使用した多原料蒸着法によってSrGa2Se4:Ce薄膜を作製した。蒸着膜の構造と組成の特性を調べ、膜の成長機構を論じた。SrSeおよびGaSe相を用いずに、Ga2Se3/Sr流量比56,基板温度450度CでSrGa2Se4膜の蒸着に成功した。これらの結果から、SrGa2Se4またはSrSeの形成は基板温度に強く依存することが示唆される。