| タイトル | Growth of I[lc]n(x)G[lc]a(1-x)A[lc]s epilayers on different types of patterned G[lc]aA[lc]s(100) substrates |
| その他のタイトル | 種々のパターンを形成したGaAs(100)基板の上でのIn(sub x)Ga(sub 1-x)As上皮層の成長 |
| 著者（日） | Balakrishnan, Krishnan; 永井 洋希; 飯田 晋; 小山 忠信; 熊川 征司; 早川 泰弘 |
| 著者（英） | Balakrishnan, Krishnan; Nagai, Hiroki; Iida, Susumu; Koyama, Tadanobu; Kumagawa, Masashi; Hayakawa, Yasuhiro |
| 著者所属（日） | 静岡大学電子工学研究所; 静岡大学電子工学研究所; 静岡大学電子工学研究所; 静岡大学電子工学研究所; 静岡大学電子工学研究所; 静岡大学電子工学研究所 |
| 著者所属（英） | Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University |
| 発行日 | 2002-03-24 |
| 刊行物名 | Bulletin of the Research Institute of Electronics, Shizuoka University
静岡大学電子工学研究所研究報告 |
| 巻 | 36 |
| 開始ページ | 11 |
| 終了ページ | 17 |
| 刊行年月日 | 2002-03-24 |
| 言語 | eng |
| 抄録 | Liquid phase epitaxial growth of In(x)Ga(1-x)As (x = 0.06) layers on various types of patterned GaAs(100) substrates was investigated. Dependence of growth morphology on the stripe orientation of the star patterned trench substrate was observed. Non-planar InGaAs layer having filled tent-like structure was grown on non-patterned substrate. When the InGaAs was grown on circular patterned substrate, non-hollow pyramid structures were obtained. Perfect hollow pyramid structured InGaAs was found to be grown on trench-substrates of GaAs(100). The formation mechanism of the hollow pyramid structured layers has been studied in detail. |
| キーワード | single crystal; liquid phase epitaxy; crystal growth; semiconductor material; InGaAs; 単結晶; 液相エピタキシー; 結晶成長; 半導体材料; InGaAs |
| 資料種別 | Technical Report |
| ISSN | 0286-3383 |
| SHI-NO | AA0032822002 |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/47212 |
