| タイトル | Ohmic contacts to solution-grown gallium arsenide |
| 著者（英） | Harris, J. S.; Day, G. F.; Pearson, G. L.; Nannichi, Y. |
| 発行日 | 1969-10-01 |
| 言語 | eng |
| 内容記述 | Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance |
| NASA分類 | PHYSICS, SOLID-STATE |
| レポートNO | 70A14213 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/474550 |
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