| タイトル | The properties of nickel in silicon. |
| 著者（英） | Ghandhi, S. K.; Thiel, F. L. |
| 発行日 | 1969-09-01 |
| 言語 | eng |
| 内容記述 | Active Ni centers properties in Si with emphasis on increasing and reducing minority carrier lifetime in silicon integrated circuits, discussing energy levels |
| NASA分類 | PHYSICS, SOLID-STATE |
| レポートNO | 69A42759 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/475855 |
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