Formation of intrinsic defects during the growth of CaF on Si(111) studied by STM

Abstract

Using Scanning Tunneling Microscopy (STM), the epitaxial growth of a monolayer of CaF on the Si(111)7 x 7 surface has been studied. It is observed how the Si atoms of the 7 x 7 structure rearrange into a bulk-like structure during the epitaxial growth and is found that four excess Si atoms per 7 x 7 unit cell are produced in the atomic rearrangement. It is discussed that these excess Si atoms form intrinsic defects in the created CaF monolayer.

走査トンネル顕微鏡を使用して、Si(111)7×7表面へのCaFの単分子層のエピタキシャル成長を調べた。エピタキシャル成長の間に7×7構造のSi原子がいかにバルク状構造に再配列するかを観察し、7×7単位セル当たり4個の過剰のSi原子が原子再配列において生成されることを見いだした。これらの過剰のSi原子がCaFの生成単分子層において真性欠陥を形成することについて述べた。