| タイトル | Increasing the response of PIN photodiodes to the ultraviolet |
| 本文（外部サイト） | http://hdl.handle.net/2060/19720000053 |
| 著者（英） | Burrous, C. N.; Whiting, E. E. |
| 著者所属（英） | NASA Ames Research Center |
| 発行日 | 1972-01-01 |
| 言語 | eng |
| 内容記述 | Solid state device uses sapphire windows and avoids coatings which absorb ultraviolet radiation and ultimately alter detector geometry. Ultimate solution for ultraviolet response is geometry with maximum peripheral area and horizontal field structure to draw out photon induced current carriers. |
| NASA分類 | PHYSICAL SCIENCES |
| レポートNO | 72B10053
ARC-10274 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/501110 |
