JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

このアイテムに関連するファイルはありません。

タイトルT-Shaped Emitter Metal Structures for HBTs
本文(外部サイト)http://hdl.handle.net/2060/20100025730
著者(英)Malik, Roger; Smith, Peter; Rodwell, Mark; Echternach, Pierre; Griffith, Zack; Muller, Richard; Martin, Suzanne; Paidi, Vamsi; Samoska, Lorene; Siegel, Peter; Urteaga, Miguel; Fung, King Man; Velebir, James
著者所属(英)California Inst. of Tech.
発行日2006-05-01
言語eng
内容記述Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes.
NASA分類Electronics and Electrical Engineering
レポートNONPO-41034
権利Copyright, Distribution as joint owner in the copyright


このリポジトリに保管されているアイテムは、他に指定されている場合を除き、著作権により保護されています。