| タイトル | T-Shaped Emitter Metal Structures for HBTs |
| 本文（外部サイト） | http://hdl.handle.net/2060/20100025730 |
| 著者（英） | Malik, Roger; Smith, Peter; Rodwell, Mark; Echternach, Pierre; Griffith, Zack; Muller, Richard; Martin, Suzanne; Paidi, Vamsi; Samoska, Lorene; Siegel, Peter; Urteaga, Miguel; Fung, King Man; Velebir, James |
| 著者所属（英） | California Inst. of Tech. |
| 発行日 | 2006-05-01 |
| 言語 | eng |
| 内容記述 | Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes. |
| NASA分類 | Electronics and Electrical Engineering |
| レポートNO | NPO-41034 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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