| タイトル | Growth method for chalcongenide phase-change nanostructures |
| 本文（外部サイト） | http://hdl.handle.net/2060/20100017306 |
| 著者（英） | Sun, Xuhui; Yu, Bin; Meyyappan, Meyya |
| 著者所属（英） | NASA Headquarters |
| 発行日 | 2010-02-02 |
| 言語 | eng |
| 内容記述 | A method for growth of an alloy for use in a nanostructure, to provide a resulting nanostructure compound including at least one of Ge.sub.xTe.sub.y, In.sub.xSb.sub.y, In.sub.xSe.sub.y, Sb.sub.xTe.sub.y, Ga.sub.xSb.sub.y, Ge.sub.xSb.sub.y,Te.sub.z, In.sub.xSb.sub.yTe.sub.z, Ga.sub.xSe.sub.yTe.sub.z, Sn.sub.xSb.sub.yTe.sub.z, In.sub.xSb.sub.yGe.sub.z, Ge.sub.wSn.sub.xSb.sub.yTe.sub.z, Ge.sub.wSb.sub.xSe.sub.yTe.sub.z, and Te.sub.wGe.sub.xSb.sub.yS.sub.z, where w, x, y and z are numbers consistent with oxidization states (2, 3, 4, 5, 6) of the corresponding elements. The melt temperatures for some of the resulting compounds are in a range 330-420.degree. C., or even lower with some compounds. |
| NASA分類 | Chemistry and Materials (General) |
| 権利 | No Copyright |
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