| タイトル | MMIC Amplifier Produces Gain of 10 dB at 235 GHz |
| 本文（外部サイト） | http://hdl.handle.net/2060/20090041656 |
| 著者（英） | Liu, Po-Hsin; Fung, King Man; Kangaslahti, Pekka; Raja, Rohit; Grundbacher, Ronald; Gaier, Todd; Lai, Richard; Dawson, Douglas; Samoska, Lorene; Lee, Karen; Wells, Mary |
| 著者所属（英） | California Inst. of Tech. |
| 発行日 | 2007-05-01 |
| 言語 | eng |
| 内容記述 | The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate. |
| NASA分類 | Electronics and Electrical Engineering |
| レポートNO | NPO-42202 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/508146 |
