| タイトル | In-Phase Power-Combined Frequency Tripler at 300 GHz |
| 本文（外部サイト） | http://hdl.handle.net/2060/20090008641 |
| 著者（英） | Javadi, Hamid; Chattopadhyay, Goutam; Lin, Robert; Maestrini, Alain; Mehdi, Imran; Ward, John; Lee, Choonsup; Gill, John |
| 著者所属（英） | Paris VI Univ. |
| 発行日 | 2009-02-01 |
| 言語 | eng |
| 内容記述 | This design starts with commercial 85- to 115-GHz sources that are amplified to as much as 250 mW using power amplifiers developed for the Herschel Space Observatory. The frequency is then tripled using a novel waveguide GaAs Schottky diode frequency tripler. This planar diode produces 26 mW at 318 GHz. Peak conversion efficiency is over 15 percent, and the measured bandwidth of about 265 - 30 GHz is limited more by the driving source than by the tripler itself. This innovation is based on an integrated circuit designed originally for a single-chip 260- to 340-GHz balanced tripler. The power-combined version has two mirror-image tripler chips that are power-combined in-phase in a single waveguide block using a compact Y-junction divider at the input waveguide, and a Y-junction combiner at the output waveguide. The tripler uses a split-block waveguide design with two independent DC bias lines. |
| NASA分類 | Electronics and Electrical Engineering |
| レポートNO | NPO-45479 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
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