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タイトルOn-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz
本文(外部サイト)http://hdl.handle.net/2060/20080048180
著者(英)Gaier, Todd; Larocca, Tim; Andrews, Michael; Man Fung, King; Samoska, Lorene; Campbell, Richard; Huang, Daquan; Chang, M. F.
著者所属(英)California Inst. of Tech.
発行日2008-09-01
言語eng
内容記述The world s first silicon-based complementary metal oxide/semiconductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator has been built and tested. These accomplishments are intermediate steps in a continuing effort to develop low-power-consumption, low-phase-noise, electronically tunable signal generators as local oscillators for heterodyne receivers in submillimeter-wavelength (frequency > 300 GHz) scientific instruments and imaging systems. Submillimeter-wavelength imaging systems are of special interest for military and law-enforcement use because they could, potentially, be used to detect weapons hidden behind clothing and other opaque dielectric materials. In comparison with prior submillimeter- wavelength signal generators, CMOS VCOs offer significant potential advantages, including great reductions in power consumption, mass, size, and complexity. In addition, there is potential for on-chip integration of CMOS VCOs with other CMOS integrated circuitry, including phase-lock loops, analog- to-digital converters, and advanced microprocessors.
NASA分類Man/System Technology and Life Support
レポートNONPO-45494
権利Copyright, Distribution as joint owner in the copyright
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/509870


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