| タイトル | Silicon germanium semiconductive alloy and method of fabricating same |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080020430 |
| 著者（英） | King, Glen C.; Choi, Sang H.; Park, Yeonjoon |
| 著者所属（英） | NASA Headquarters |
| 発行日 | 2008-03-11 |
| 言語 | eng |
| 内容記述 | A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. |
| NASA分類 | Metals and Metallic Materials |
| 権利 | No Copyright |
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