| タイトル | Tunable quantum well infrared detector |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080008789 |
| 著者（英） | Maserjian, Joseph |
| 著者所属（英） | California Inst. of Tech. |
| 発行日 | 1990-02-20 |
| 言語 | eng |
| 内容記述 | A novel infrared detector (20, 20', 20), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
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