| タイトル | Gallium arsenide single crystal solar cell structure and method of making |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080007398 |
| 著者（英） | Stirn, Richard J. |
| 著者所属（英） | California Inst. of Tech. |
| 発行日 | 1983-01-25 |
| 言語 | eng |
| 内容記述 | A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film. |
| NASA分類 | Energy Production and Conversion |
| 権利 | No Copyright |
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