| タイトル | Vapor phase growth technique of III-V compounds utilizing a preheating step |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080006897 |
| 著者（英） | Olsen, Gregory Hammond; Buiocchi, Charles Joseph; Zamerowski, Thomas Joseph |
| 著者所属（英） | Radio Corp. of America |
| 発行日 | 1978-09-26 |
| 言語 | eng |
| 内容記述 | In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
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