| タイトル | Using a delta-doped CCD to determine the energy of a low-energy particle |
| 本文（外部サイト） | http://hdl.handle.net/2060/20080004673 |
| 著者（英） | Murphy, Gerald B.; Croley, Donald R.; Nikzad, Shouleh |
| 著者所属（英） | California Inst. of Tech. |
| 発行日 | 2001-08-21 |
| 言語 | eng |
| 内容記述 | The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV. |
| NASA分類 | Instrumentation and Photography |
| 権利 | No Copyright |
