| タイトル | Preferentially Etched Epitaxial Liftoff of InP Material |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970022002 |
| 著者（英） | Wilt, David M.; Bailey, Sheila G.; DeAngelo, Frank L. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1997-06-24 |
| 言語 | eng |
| 内容記述 | The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer. |
| NASA分類 | Solid-State Physics |
| レポートNO | 97N22676 |
| 権利 | No Copyright |
