タイトル | Phenomenological study of radiation damage and recovery of metal-oxide field effect transistors |
著者(英) | Van Allen, R. L.; Desai, U. D.; Wolfgang, J. L., Jr. |
著者所属(英) | NASA Goddard Space Flight Center |
発行日 | 1967-06-01 |
言語 | eng |
内容記述 | Phenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors |
NASA分類 | ELECTRONIC EQUIPMENT |
レポートNO | 67N31601 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/519165 |
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