| タイトル | Investigation of the topographical features of surface carrier concentrations in silicon solar cell material using electrolyte electroreflectance |
| 著者（英） | Okeke, C. E.; Raccah, P. M.; Pollay, F. H. |
| 著者所属（英） | Yeshiva Univ. |
| 発行日 | 1977-01-01 |
| 言語 | eng |
| 内容記述 | Topographical variations in carrier concentration delta N/N across the surface of n(+) on p diffused silicon solar cell material are studied by utilizing electrolyte electroreflectance with a spatial resolution of 100 microns within approximately 500 A of the surface. The topographical variations of delta N/N approximately 10 - 20% are found to be comparable to Czochralski grown material. The electroreflectance method can also be utilized to investigate other semiconductors such as GaAs. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 78N13535 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/525689 |
