タイトル | High temperature LSI |
本文(外部サイト) | http://hdl.handle.net/2060/19820007459 |
著者(英) | Dening, D. C.; Ragonese, L. J.; Lee, C. Y. |
著者所属(英) | General Electric Co. |
発行日 | 1982-01-01 |
言語 | eng |
内容記述 | Integrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask. |
NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
レポートNO | 82N15332 |
権利 | No Copyright |
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