| タイトル | High temperature LSI |
| 本文（外部サイト） | http://hdl.handle.net/2060/19820007459 |
| 著者（英） | Dening, D. C.; Ragonese, L. J.; Lee, C. Y. |
| 著者所属（英） | General Electric Co. |
| 発行日 | 1982-01-01 |
| 言語 | eng |
| 内容記述 | Integrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 82N15332 |
| 権利 | No Copyright |
|
